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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9034706 B1

PDFFull Text
Date of Patent:
May. 19, 2015

Filed:

Apr. 19, 2013

Finfets with regrown source/drain and methods for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Eric Chih-Fang Liu, Taipei, TW;

Tzu-Wei Kao, Baoshan Township, TW;

Ryan Chia-Jen Chen, Chiaya, TW;

Chao-Cheng Chen, Hsin-Chu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater & Matsil, L.L.P.

Primary Examiner:

Brett Feeney

Assistant Examiner:

Pamela E Perkins

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01);
Abstract

A method includes etching a semiconductor substrate to form a recess in the semiconductor substrate, and reacting a surface layer of the semiconductor substrate to generate a reacted layer. The surface layer of the semiconductor substrate is in the recess. The reacted layer is then removed. An epitaxy is performed to grow a semiconductor material in the recess.

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Liu, Eric Chih-Fang. (2015). Finfets with regrown source/drain and methods for forming the same (U.S. Patent No. 9034706). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9034706

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