The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Dec. 18, 2013
Applicant:
Intermolecular, Inc., San Jose, CA (US);
Inventors:
Assignee:
Intermolecular, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/16 (2006.01); H01L 21/306 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/465 (2006.01); H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); H01L 27/1225 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 21/465 (2013.01); H01L 21/707 (2013.01);
Abstract
Embodiments described herein provide methods for forming indium-gallium-zinc oxide (IGZO) devices. A substrate is provided. An IGZO layer is formed above the substrate. A copper-containing layer is formed above the IGZO layer. A wet etch process is performed on the copper-containing layer to form a source region and a drain region above the IGZO layer. The performing of the wet etch process on the copper-containing layer includes exposing the copper-containing layer to an etching solution including a peroxide compound and one of citric acid, formic acid, malonic acid, lactic acid, etidronic acid, phosphonic acid, or a combination thereof.