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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9034685 B1

PDFFull Text
Date of Patent:
May. 19, 2015

Filed:

Feb. 10, 2012

Methodology for forming pnictide compositions suitable for use in microelectronic devices

Applicants:

Gregory M. Kimball, Campbell, CA (US);

Jeffrey P. Bosco, Pasadena, CA (US);

Harry A. Atwater, South Pasadena, CA (US);

Nathan S. Lewis, La Canada, CA (US);

Marty W. Degroot, Middletown, DE (US);

James C. Stevens, Richmond, TX (US);

Inventors:

Gregory M. Kimball, Campbell, CA (US);

Jeffrey P. Bosco, Pasadena, CA (US);

Harry A. Atwater, South Pasadena, CA (US);

Nathan S. Lewis, La Canada, CA (US);

Marty W. Degroot, Middletown, DE (US);

James C. Stevens, Richmond, TX (US);

Assignees:

Dow Global Technologies LLC, Midland, MI (US);

California Institute of Technology, Pasadena, CA (US);

Attorney:

Kagan Binder, PLLC

Primary Examiner:

Mark A Laurenzi

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/18 (2006.01); C30B 23/02 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 31/032 (2006.01); H01L 31/0392 (2006.01); H01L 31/068 (2012.01); H01L 31/075 (2012.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); C30B 23/02 (2013.01); C30B 29/40 (2013.01); H01L 21/02395 (2013.01); H01L 21/02409 (2013.01); H01L 21/02538 (2013.01); H01L 21/02568 (2013.01); H01L 21/02573 (2013.01); H01L 21/0262 (2013.01); H01L 21/02631 (2013.01); H01L 31/0321 (2013.01); H01L 31/0392 (2013.01); H01L 31/068 (2013.01); H01L 31/075 (2013.01);
Abstract

The present invention provides methods for making pnictide compositions, particularly photoactive and/or semiconductive pnictides. In many embodiments, these compositions are in the form of thin films grown on a wide range of suitable substrates to be incorporated into a wide range of microelectronic devices, including photovoltaic devices, photodetectors, light emitting diodes, betavoltaic devices, thermoelectric devices, transistors, other optoelectronic devices, and the like. As an overview, the present invention prepares these compositions from suitable source compounds in which a vapor flux is derived from a source compound in a first processing zone, the vapor flux is treated in a second processing zone distinct from the first processing zone, and then the treated vapor flux, optionally in combination with one or more other ingredients, is used to grow pnictide films on a suitable substrate.

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