The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

Sep. 13, 2012
Applicants:

Jeffrey S. Lille, Sunnyvale, CA (US);

Kurt A. Rubin, San Jose, CA (US);

Ricardo Ruiz, Santa Clara, CA (US);

Lei Wan, San Jose, CA (US);

Inventors:

Jeffrey S. Lille, Sunnyvale, CA (US);

Kurt A. Rubin, San Jose, CA (US);

Ricardo Ruiz, Santa Clara, CA (US);

Lei Wan, San Jose, CA (US);

Assignee:

HGST NETHERLANDS B.V., Amsterdam, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); G11B 5/855 (2006.01); G11B 5/74 (2006.01); G03F 7/00 (2006.01); B81C 1/00 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
G11B 5/855 (2013.01); G11B 5/743 (2013.01); G03F 7/0035 (2013.01); B81C 1/00031 (2013.01); H01L 21/0338 (2013.01); Y10S 977/888 (2013.01);
Abstract

The disclosure relates generally to a method for fabricating a patterned medium. The method includes providing a substrate with an exterior layer under a lithographically patterned surface layer, the lithographically patterned surface layer comprising a first pattern in a first region and a second pattern in a second region, applying a first masking material over the first region, transferring the second pattern into the exterior layer in the second region, forming self-assembled block copolymer structures over the lithographically patterned surface layer, the self-assembled block copolymer structures aligning with the first pattern in the first region, applying a second masking material over the second region, transferring the polymer block pattern into the exterior layer in the first region, and etching the substrate according to the second pattern transferred to the exterior layer in the second region and the polymer block pattern transferred to the exterior layer in the first region.


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