The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2015
Filed:
Jun. 30, 2010
Sandra B. Schujman, Niskayuna, NY (US);
Shailaja P. Rao, Albany, NY (US);
Robert T. Bondokov, Watervliet, NY (US);
Kenneth E. Morgan, Castleton, NY (US);
Glen A. Slack, Scotia, NY (US);
Leo J. Schowalter, Latham, NY (US);
Sandra B. Schujman, Niskayuna, NY (US);
Shailaja P. Rao, Albany, NY (US);
Robert T. Bondokov, Watervliet, NY (US);
Kenneth E. Morgan, Castleton, NY (US);
Glen A. Slack, Scotia, NY (US);
Leo J. Schowalter, Latham, NY (US);
CRYSTAL IS, INC., Green Island, NY (US);
Abstract
In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.