The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2015

Filed:

Nov. 01, 2011
Applicants:

Nai-han Cheng, Hsinchu, TW;

Chin-hsiang Lin, Hsin-Chu, TW;

Chi-ming Yang, Hsian-San District, TW;

Chun-lin Chang, Jhubei, TW;

Chih-hong Hwang, New Taipei, TW;

Inventors:

Nai-Han Cheng, Hsinchu, TW;

Chin-Hsiang Lin, Hsin-Chu, TW;

Chi-Ming Yang, Hsian-San District, TW;

Chun-Lin Chang, Jhubei, TW;

Chih-Hong Hwang, New Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 19/00 (2011.01); G06F 17/50 (2006.01); H01L 29/00 (2006.01); H01L 27/082 (2006.01); H05K 1/00 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5063 (2013.01); G06F 2217/10 (2013.01);
Abstract

A method and system for integrated circuit fabrication is disclosed. In an example, the method includes determining a first process parameter of a wafer and a second process parameter of the wafer, the first process parameter and the second process parameter corresponding to different wafer characteristics; determining a variation of a device parameter of the wafer based on the first process parameter and the second process parameter; constructing a model for the device parameter as a function of the first process parameter and the second process parameter based on the determined variation of the device parameter of the wafer; and performing a fabrication process based on the model.


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