The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Dec. 07, 2012
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Hsin-Wen Chen, Kaohsiung, TW;
Assignee:
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/22 (2006.01); G11C 11/40 (2006.01); G11C 5/14 (2006.01); G11C 7/02 (2006.01); G11C 11/417 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 11/40 (2013.01); G11C 5/14 (2013.01); G11C 7/02 (2013.01); G11C 11/417 (2013.01); G11C 11/419 (2013.01);
Abstract
A memory device includes a memory array, an array gap, a voltage provider, and a voltage divider. The voltage provider is disposed in the array gap and coupled to a column of memory cells of the memory array for providing a first voltage to the column of memory cells when a memory cell of the column is selected at a write cycle. The voltage provider is coupled to the voltage provider and the column of memory cells for providing a second voltage lower than the first voltage to the column of memory cells when the memory of the column is half selected at the write cycle.