The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Aug. 26, 2011
Violante Moschiano, Bacoli, IT;
Tommaso Vali, Sezze, IT;
Giovanni Naso, Frosinone, IT;
Vishal Sarin, Cupertino, CA (US);
William Henry Radke, Los Gatos, CA (US);
Theodore T. Pekny, Sunnyvale, CA (US);
Violante Moschiano, Bacoli, IT;
Tommaso Vali, Sezze, IT;
Giovanni Naso, Frosinone, IT;
Vishal Sarin, Cupertino, CA (US);
William Henry Radke, Los Gatos, CA (US);
Theodore T. Pekny, Sunnyvale, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Threshold voltages in a charge storage memory are controlled by threshold voltage placement, such as to provide more reliable operation and to reduce the influence of factors such as neighboring charge storage elements and parasitic coupling. Pre-compensation or post-compensation of threshold voltage for neighboring programmed 'aggressor' memory cells reduces the threshold voltage uncertainty in a flash memory system. Using a buffer having a data structure such as a lookup table provides for programmable threshold voltage distributions that enables the distribution of data states in a multi-level cell flash memory to be tailored, such as to provide more reliable operation.