The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2015

Filed:

Oct. 11, 2013
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventors:

Ki Il Moon, Yongin-si, KR;

Jae Sung Oh, Icheon-si, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/14 (2013.01); H01L 21/76898 (2013.01); H01L 24/67 (2013.01);
Abstract

A stacked semiconductor package includes: a first semiconductor chip formed with a first through electrode, the first through electrode protruding above a first surface of the first semiconductor chip; a first polymer layer formed over the first surface of the first semiconductor chip such that the first through electrode is exposed by the first polymer layer; a second semiconductor chip having a first surface attached onto the first semiconductor chip by medium of the first polymer layer and a vial hole passing through the second semiconductor chip, the first surface of the second semiconductor chip being formed with a bonding pad having a through hole which corresponds to the first through electrode; and a second through electrode located within the through hole and the via hole and is electrically connected with the first through electrode.


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