The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Apr. 19, 2012
Chih-ling Hung, Kaohsiung, TW;
Chien-wen Chu, Yangmei Township, Taoyuan County, TW;
Hsin-liang Chen, Taipei, TW;
Wing-chor Chan, Hsinchu, TW;
Chih-Ling Hung, Kaohsiung, TW;
Chien-Wen Chu, Yangmei Township, Taoyuan County, TW;
Hsin-Liang Chen, Taipei, TW;
Wing-Chor Chan, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor structure includes a substrate, a first well having a first conductive type, a second well having a second conductive type, a body region, a first doped region, a second doped region, a third doped region and a field plate. The first and second wells are formed in the substrate. The body region is formed in the second well. The first and second doped regions are formed in the first well and the body region, respectively. The second and first doped regions have the same polarities, and the dopant concentration of the second doped region is higher than that of the first doped region. The third doped region is formed in the second well and located between the first and second doped regions. The third and first doped regions have reverse polarities. The field plate is formed on the surface region between the first and second doped regions.