The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Mar. 20, 2012
Chien-wen Chu, Yangmei Township, Taoyuan County, TW;
Wing-chor Chan, Hsinchu, TW;
Shyi-yuan Wu, Hsin-Chu, TW;
Chien-Wen Chu, Yangmei Township, Taoyuan County, TW;
Wing-Chor Chan, Hsinchu, TW;
Shyi-Yuan Wu, Hsin-Chu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate, a first source/drain region, a second source/drain region, a first stack structure and a second stack structure. The first source/drain region is formed in the substrate. The second source/drain region is formed in the substrate. The first stack structure is on the substrate between the first source/drain region and the second source/drain region. The first stack structure comprises a first dielectric layer and a first conductive layer on the first dielectric layer. The second stack structure is on the first stack structure. The second stack structure comprises a second dielectric layer and a second conductive layer on the second dielectric layer.