The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
May. 06, 2011
Sei-hyung Ryu, Cary, NC (US);
Doyle Craig Capell, Hillsborough, NC (US);
Lin Cheng, Chapel Hill, NC (US);
Sarit Dhar, Cary, NC (US);
Charlotte Jonas, Morrisville, NC (US);
Anant Agarwal, Chapel Hill, NC (US);
John Palmour, Cary, NC (US);
Sei-Hyung Ryu, Cary, NC (US);
Doyle Craig Capell, Hillsborough, NC (US);
Lin Cheng, Chapel Hill, NC (US);
Sarit Dhar, Cary, NC (US);
Charlotte Jonas, Morrisville, NC (US);
Anant Agarwal, Chapel Hill, NC (US);
John Palmour, Cary, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region. The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region.