The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Mar. 15, 2013
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Hyung Soon Park, Icheon-si, KR;
Kwon Hong, Seongnam-si, KR;
Jong Min Lee, Suwon-si, KR;
Hyung Hwan Kim, Icheon-si, KR;
Ji Hye Han, Seoul, KR;
Geun Su Lee, Yongin-si, KR;
Assignees:
SK Hynix Inc., Icheon, KR;
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/316 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02164 (2013.01); H01L 21/02219 (2013.01); H01L 21/02222 (2013.01); H01L 21/02282 (2013.01); H01L 21/02307 (2013.01); H01L 21/02326 (2013.01); H01L 21/02343 (2013.01);
Abstract
A method for forming a silicon oxide film of a semiconductor device is disclosed. The method of forming the silicon oxide film of the semiconductor device includes performing surface processing using an amine-based compound, so that the uniformity and density of the silicon oxide film may be improved.