The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Feb. 05, 2013
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Praveen Reddy Nalla, Fremont, CA (US);
Novy Sastrawati Tjokro, San Ramon, CA (US);
Artur Kolics, Dublin, CA (US);
Seshasayee Varadarajan, Lake Oswego, OR (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/02697 (2013.01); H01L 23/481 (2013.01); H01L 2924/0002 (2013.01);
Abstract
To achieve the foregoing and in accordance with the purpose of the present invention, a method for filling through silicon vias is provided. A dielectric layer is formed over the through silicon vias. A barrier layer, comprising tungsten, is deposited by CVD or ALD over the dielectric layer. The through silicon vias are filled with a conductive material.