The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Mar. 01, 2011
Eng Huat Toh, Singapore, SG;
Elgin Quek, Singapore, SG;
Ying Keung Leung, Singapore, SG;
Sanford Chu, Leonie Condotel, SG;
Eng Huat Toh, Singapore, SG;
Elgin Quek, Singapore, SG;
Ying Keung Leung, Singapore, SG;
Sanford Chu, Leonie Condotel, SG;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
A p-channel flash memory is formed with a charge storage stack embedded in a hetero-junction layer in which a raised source/drain is formed. Embodiments include forming a dummy gate stack on a substrate, forming a layer on the substrate by selective epitaxial growth, on each side of the dummy gate stack, forming spacers on the layer, forming raised source/drains, removing the dummy gate stack, forming a cavity between the spacers, and forming a memory gate stack in the cavity. Different embodiments include forming the layer of a narrow bandgap material, a narrow bandgap layer under the spacers and a wide bandgap layer adjacent thereto, or a wide bandgap layer under the spacers, a narrow bandgap layer adjacent thereto, and a wide bandgap layer on the narrow bandgap layer.