The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2015

Filed:

Jan. 08, 2015
Applicants:

Imec, Leuven, BE;

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Benjamin Vincent, San Francisco, CA (US);

Geert Hellings, Heverlee, BE;

David Paul Brunco, Tervuren, BE;

Assignees:

IMEC, Leuven, BE;

GlobalFoundries Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/94 (2006.01); H01L 29/66 (2006.01); H01L 29/161 (2006.01); H01L 21/02 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 29/161 (2013.01); H01L 21/02532 (2013.01); H01L 21/0257 (2013.01); H01L 29/1054 (2013.01);
Abstract

The disclosure is related to a band engineered semiconductor device comprising a substrate and a protruding structure that is formed in a recess in the substrate. The protruding structure extends above the recess and has a buried portion and an extended portion. At least the extended portion comprises a semiconductor material having an inverted 'V' band gap profile with a band gap value increasing gradually from a first value at lateral edges of the structure to a second value, higher than the first value, in a center of the structure. The disclosure is also related to the method of manufacturing of such a band engineered semiconductor device.


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