The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Dec. 20, 2013
Intermolecular Inc., San Jose, CA (US);
Chien-Lan Hsueh, Campbell, CA (US);
Yun Wang, San Jose, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof using metal organic chemical vapor deposition (MOCVD). Specifically, the MOCVD is used to form a resistive switching layer including oxides of at least two elements. The resistive switching layer may have a variable composition throughout its thickness, which may be achieved by dynamically varying flow rates of metal organic precursors during MOCVD of the resistive switching layer. In some embodiments, the first element may be a transition metal, while the second element may be a component forming an insulating oxide. The second element may be concentrated in the middle of the resistive switching layer between its bottom and top sides and may not be present at either one of these sides. Such distribution of materials allows controlling the size and composition of a switching zone within the resistive switching layer and reducing power needed for switching.