The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Mar. 06, 2012
Naomi Shida, Tokyo, JP;
Kenji Todori, Yokohama, JP;
Shigehiko Mori, Kawasaki, JP;
Ko Yamada, Yokohama, JP;
Masakazu Yamagiwa, Tokyo, JP;
Reiko Yoshimura, Kawasaki, JP;
Yasuyuki Hotta, Tokyo, JP;
Tsukasa Tada, Tokyo, JP;
Hiroyuki Kashiwagi, Fujisawa, JP;
Ikuo Yoneda, Yokohama, JP;
Naomi Shida, Tokyo, JP;
Kenji Todori, Yokohama, JP;
Shigehiko Mori, Kawasaki, JP;
Ko Yamada, Yokohama, JP;
Masakazu Yamagiwa, Tokyo, JP;
Reiko Yoshimura, Kawasaki, JP;
Yasuyuki Hotta, Tokyo, JP;
Tsukasa Tada, Tokyo, JP;
Hiroyuki Kashiwagi, Fujisawa, JP;
Ikuo Yoneda, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.