The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Dec. 07, 2011
Chin-chun Huang, Taichung, TW;
Ji-fu Kung, Taichung, TW;
Wei-po Chiu, Hsinchu, TW;
Nick Chao, Hsinchu, TW;
Chin-Chun Huang, Taichung, TW;
Ji-Fu Kung, Taichung, TW;
Wei-Po Chiu, Hsinchu, TW;
Nick Chao, Hsinchu, TW;
United Microelectronics Corporation, Hsinchu, TW;
Abstract
A monitoring testkey for a wafer is provided. The monitoring testkey includes a first metal oxide semiconductor (MOS) transistor having a channel extending in a first direction, a second MOS transistor having a channel extending in a second direction, a common gate pad electrically connected to gate electrodes of the first MOS transistor and the second MOS transistor, a first source pad electrically connected to source electrodes of the first MOS transistor and the second MOS transistor, a first drain pad electrically connected to a drain electrode of the first MOS transistor, and a second drain pad electrically connected to a drain electrode of the second MOS transistor. The monitoring testkey helps to improve the critical dimension uniformity and electrical characteristics uniformity of elements in a wafer.