The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2015

Filed:

Nov. 02, 2011
Applicants:

Yimin Kang, San Jose, CA (US);

Zhihong Connie Huang, Santa Clara, CA (US);

Han-din Dean Liu, San Jose, CA (US);

Yuval Saado, Qiriyat Gat, IL;

Yun-chung Neil NA, Palo Alto, CA (US);

Inventors:

Yimin Kang, San Jose, CA (US);

Zhihong Connie Huang, Santa Clara, CA (US);

Han-Din Dean Liu, San Jose, CA (US);

Yuval Saado, Qiriyat Gat, IL;

Yun-Chung Neil Na, Palo Alto, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 31/107 (2006.01); H01L 29/732 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2012.01); H01L 31/109 (2006.01); H01L 31/028 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02327 (2013.01); H01L 31/107 (2013.01); H01L 31/028 (2013.01);
Abstract

Devices comprised of end-on waveguide-coupled photodetectors are described. In embodiments of the invention, the photodetectors are avalanche photodiodes coupled end-on to a waveguide. The waveguide includes an insulating trench proximate to the coupled photodetector. In embodiments of the invention, the avalanche photodiodes are silicon/germanium avalanche photodiodes.


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