The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Sep. 10, 2012
Applicants:
Li-fan Chen, Hsinchu, TW;
Wing-chor Chan, Hsinchu, TW;
Jeng Gong, Taichung, TW;
Inventors:
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/808 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/808 (2013.01); H01L 29/0634 (2013.01); H01L 29/0692 (2013.01); H01L 29/1066 (2013.01);
Abstract
A high voltage junction field effect transistor and a manufacturing method thereof are provided. The high voltage junction field effect transistor includes a base, a drain, a source and a P type top layer. The drain and the source are disposed above the base. A channel is formed between the source and the drain. The P type top layer is disposed above the channel.
Quick Actions:
Chen, Li-Fan. (2015). High voltage junction field effect transistor and manufacturing method thereof (U.S. Patent No. 9024365). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9024365
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile