The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2015

Filed:

Dec. 26, 2013
Applicants:

Yukihiko Watanabe, Nagoya, JP;

Sachiko Aoi, Nagoya, JP;

Masahiro Sugimoto, Toyota, JP;

Akitaka Soeno, Toyota, JP;

Shinichiro Miyahara, Nagoya, JP;

Inventors:

Yukihiko Watanabe, Nagoya, JP;

Sachiko Aoi, Nagoya, JP;

Masahiro Sugimoto, Toyota, JP;

Akitaka Soeno, Toyota, JP;

Shinichiro Miyahara, Nagoya, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/47 (2006.01); H01L 29/45 (2006.01); H01L 29/16 (2006.01); H01L 21/285 (2006.01); H01L 29/78 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/47 (2013.01); H01L 21/28518 (2013.01); H01L 29/1608 (2013.01); H01L 29/45 (2013.01); H01L 29/78 (2013.01); H01L 21/0485 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes forming an ohmic electrode in a first area on one of main surfaces of a silicon carbide layer, siliciding the ohmic electrode, and forming a Schottky electrode in a second area on the one of the main surfaces of the silicon carbide layer with self alignment. The second area is exposed where the ohmic electrode is not formed.


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