The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Sep. 05, 2012
Applicants:
James A. Teplik, Mesa, AZ (US);
Bruce M. Green, Gilbert, AZ (US);
Inventors:
James A. Teplik, Mesa, AZ (US);
Bruce M. Green, Gilbert, AZ (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/402 (2013.01); H01L 29/7789 (2013.01); H01L 29/66431 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/2003 (2013.01);
Abstract
A low leakage current transistor () is provided which includes a GaN-containing substrate (-) covered by a passivation surface layer () in which a T-gate electrode with sidewall extensions () is formed and coated with a multi-level passivation layer (-) which includes an intermediate etch stop layer () which is used to define a continuous multi-region field plate () having multiple distances between the bottom surface of the field plateand the semiconductor substrate in the gate-drain region of the transistor.