The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Apr. 06, 2010
Takeshi Hara, Osaka, JP;
Hirohiko Nishiki, Osaka, JP;
Yoshimasa Chikama, Osaka, JP;
Kazuo Nakagawa, Osaka, JP;
Yoshifumi Ohta, Osaka, JP;
Tetsuya Aita, Osaka, JP;
Masahiko Suzuki, Osaka, JP;
Okifumi Nakagawa, Osaka, JP;
Yoshiyuki Miyajima, Osaka, JP;
Michiko Takei, Osaka, JP;
Yoshiyuki Harumoto, Osaka, JP;
Hinae Mizuno, Yamato, JP;
Takeshi Hara, Osaka, JP;
Hirohiko Nishiki, Osaka, JP;
Yoshimasa Chikama, Osaka, JP;
Kazuo Nakagawa, Osaka, JP;
Yoshifumi Ohta, Osaka, JP;
Tetsuya Aita, Osaka, JP;
Masahiko Suzuki, Osaka, JP;
Okifumi Nakagawa, Osaka, JP;
Yoshiyuki Miyajima, Osaka, JP;
Yuuji Mizuno, Osaka, JP;
Michiko Takei, Osaka, JP;
Yoshiyuki Harumoto, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
The present invention provides a thin film transistor including an oxide semiconductor layer () for electrically connecting a signal electrode () and a drain electrode (), the an oxide semiconductor layer being made from an oxide semiconductor; and a barrier layer () made from at least one selected from the group consisting of Ti, Mo, W, Nb, Ta, Cr, nitrides thereof, and alloys thereof, the barrier layer () being in touch with the signal electrode () and the oxide semiconductor layer () and separating the signal electrode () from the oxide semiconductor layer (). Because of this configuration, the thin film transistor can form and maintain an ohmic contact between the first electrode and the channel layer, thereby being a thin film transistor with good properties.