The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Dec. 23, 2013
Industrial Technology Research Institute, Hsinchu, TW;
Kung-Liang Lin, Hsinchu, TW;
Chien-Chih Chen, Taichung, TW;
Fu-Ching Tung, Hsinchu, TW;
Chih-Yung Chen, Hsinchu, TW;
Shih-Chin Lin, New Taipei, TW;
Kuan-Yu Lin, Changhua County, TW;
Chia-Hao Chang, Nantou County, TW;
Shieh-Sien Wu, Chiayi County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A multi-mode thin film deposition apparatus including a reaction chamber, a carrying seat, a showerhead, an inert gas supplying source, a first gas inflow system and a second gas inflow system is provided. The carrying seat is disposed in the reaction chamber. The showerhead has a gas mixing room and gas holes disposed at a side of the gas mixing room. The gas mixing room is connected to the reaction chamber through the plurality of gas holes which faces the carrying seat. The first gas inflow system is connected to the reaction chamber and supplies a first process gas during a first thin film deposition process mode. The inert gas supplying source is connected to the gas mixing room for supplying an inert gas. The second gas inflow system is connected to the gas mixing room to supply a second process gas during a second thin film deposition process mode.