The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
May. 25, 2012
Jivko Dinev, Santa Clara, CA (US);
Saravjeet Singh, Santa Clara, CA (US);
Khalid M. Sirajuddin, San Jose, CA (US);
Tong Liu, San Jose, CA (US);
Puneet Bajaj, Mountain View, CA (US);
Rohit Mishra, Santa Clara, CA (US);
Sonal A. Srivastava, Fremont, CA (US);
Madhava Rao Yalamanchili, Morgan Hill, CA (US);
Ajay Kumar, Cupertino, CA (US);
Jivko Dinev, Santa Clara, CA (US);
Saravjeet Singh, Santa Clara, CA (US);
Khalid M. Sirajuddin, San Jose, CA (US);
Tong Liu, San Jose, CA (US);
Puneet Bajaj, Mountain View, CA (US);
Rohit Mishra, Santa Clara, CA (US);
Sonal A. Srivastava, Fremont, CA (US);
Madhava Rao Yalamanchili, Morgan Hill, CA (US);
Ajay Kumar, Cupertino, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments described herein generally relate to a substrate processing system and related methods, such as an etching/deposition method. The method comprises (A) depositing a protective layer on a first layer disposed on a substrate in an etch reactor, wherein a plasma source power of 4,500 Watts or greater is applied while depositing the protective layer, (B) etching the protective layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the protective layer, and (C) etching the first layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the first layer, wherein a time for the depositing a protective layer (A) comprises less than 30% of a total cycle time for the depositing a protective layer (A), the etching the protective layer (B), and the etching the first layer (C).