The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

May. 24, 2013
Applicant:

Phison Electronics Corp., Miaoli, TW;

Inventors:

Wei Lin, Taipei, TW;

Tien-Ching Wang, Kaohsiung, TW;

Kuo-Hsin Lai, Hsinchu County, TW;

Yu-Cheng Hsu, Yilan County, TW;

Kuo-Yi Cheng, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01);
Abstract

A data reading method for a rewritable non-volatile memory module is provided. The method includes applying a test voltage to a word line of the rewritable non-volatile memory module to read a plurality of verification bit data. The method also includes calculating a variation of bit data identified as a first status among the verification bit data, obtaining a new read voltage value set based on the variation, and updating a threshold voltage set for the word line with the new read voltage value set. The method further includes using the updated threshold voltage set to read data from a physical page formed by memory cells connected to the word line. Accordingly, storage states of memory cells in the rewritable non-volatile memory module can be identified correctly, thereby preventing data stored in the memory cells from losing.


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