The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Oct. 26, 2012
Win Semiconductors Corp., Kuei Shan Hsiang, Tao Yuan Shien, TW;
Cheng-Kuo Lin, Tao Yuan Shien, TW;
Szu-Ju Li, Tao Yuan Shien, TW;
Rong-Hao Syu, Tao Yuan Shien, TW;
Shu-Hsiao Tsai, Tao Yuan Shien, TW;
WIN Semiconductors Corp., Kuei Shan Hsiang, Tao Yuan Shien, TW;
Abstract
An integrated structure of compound semiconductor devices is disclosed. The integrated structure comprises from bottom to top a substrate, a first epitaxial layer, an etching-stop layer, a second epitaxial layer, a sub-collector layer, a collector layer, a base layer, and an emitter layer, in which the first epitaxial layer is a p-type doped layer, the second epitaxial layer is an n-type graded doping layer with a gradually increased or decreased doping concentration, and the sub-collector layer is an n-type doped layer. The integrated structure can be used to form an HBT, a varactor, or an MESFET.