The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Jan. 24, 2014
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Kazuhiro Maeda, Tokyo, JP;

Toshihiko Shiga, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/3205 (2006.01); H01L 29/04 (2006.01); H01L 21/283 (2006.01); H01L 29/16 (2006.01); H01L 29/22 (2006.01);
U.S. Cl.
CPC ...
H01L 29/045 (2013.01); H01L 21/283 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/22 (2013.01);
Abstract

A semiconductor device includes a substrate having a hexagonal crystalline structure and a (0001) surface, and conductive films on the surface of the substrate. The conductive films include a first conductive film and a second conductive film located above the first conductive film with respect to the surface, wherein the first conductive film has a crystalline structure which does not have a plane that has a symmetry equivalent to the symmetry of atomic arrangement in the surface of the substrate, the second conductive film has a crystalline structure having at least one plane that has a symmetry equivalent to the symmetry of atomic arrangement in the surface of the substrate, and the second conductive film is polycrystalline and has a grain size no larger than 15 μm.


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