The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2015

Filed:

Dec. 30, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Takashi Izumida, Kanagawa-ken, JP;

Tsukasa Nakai, Mie-ken, JP;

Masaki Kondo, Mie-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01); H01L 27/105 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1052 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode layers stacked alternately with a plurality of insulating layers on the substrate, a channel body provided inside a hole piercing the stacked body, and a memory portion provided between the channel body and each of the plurality of electrode layers. The hole has a large diameter portion and a small diameter portion. The diameter of the hole is smaller at the small diameter portion than at the large diameter portion. A thickness of the electrode layer adjacent to the small diameter portion is thicker than a thickness of the electrode layer adjacent to the large diameter portion.


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