The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Apr. 11, 2012
Ken Tomino, Tokyo-to, JP;
Shin-ya Fujimoto, Tokyo-to, JP;
Hiroki Maeda, Tokyo-to, JP;
Dai Nippon Printing Co., Ltd., Tokyo-to, JP;
Abstract
A method for manufacturing an organic semiconductor element, capable of obtaining an organic semiconductor element in which an organic semiconductor layer is easily patterned without being lowered in mobility, which includes: a source electrode and drain electrode formation step; an organic semiconductor layer formation step of forming an organic semiconductor layer having the liquid crystal organic semiconductor material on the alignment layer to cover the source electrode and the drain electrode; a dielectric layer formation step of forming a dielectric layer on the organic semiconductor layer to be positioned at least on a channel region between the source electrode and the drain electrode; and an annealing step of annealing the organic semiconductor layer, on which the dielectric layer is formed, at a liquid crystal phase temperature of the liquid crystal organic semiconductor material.