The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Oct. 10, 2012
International Business Machines Corporation, Armonk, NY (US);
Thomas W. Dyer, Pleasant Valley, NY (US);
Hanako Henry, Newburgh, NY (US);
Tze-Man Ko, Hopewell Junction, NY (US);
Yiheng Xu, Hopewell Junction, NY (US);
Shaoning Yao, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming an interconnect structure for a semiconductor device includes forming a lower antireflective coating layer over a dielectric layer; forming an organic planarizing layer on the lower antireflective coating layer; transferring a wiring pattern through the organic planarizing layer; transferring the wiring pattern through the lower antireflective coating layer; and transferring the wiring pattern through the dielectric layer, wherein unpatterned portions of the lower antireflective coating layer serve as an etch stop layer so as to prevent any bubble defects present in the organic planarizing layer from being transferred to the dielectric layer.