The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Apr. 24, 2013
Applicant:
Intermolecular Inc., San Jose, CA (US);
Inventors:
Randall J. Higuchi, San Jose, CA (US);
Chien-Lan Hsueh, Campbell, CA (US);
Yun Wang, San Jose, CA (US);
Assignee:
Intermolecular, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); H01L 21/0228 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/145 (2013.01); H01L 45/1616 (2013.01);
Abstract
A nonvolatile resistive memory element includes a novel switching layer and methods of forming the same. The switching layer includes a material having bistable resistance properties and formed by bonding silicon to oxygen or nitrogen. The switching layer may include at least one of SiO, SiON, or SiN. Advantageously, the SiO, SiON, and SiNgenerally remain amorphous after thermal anneal processes are used to form the devices, such as ReRAM devices.