The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Feb. 02, 2009
Takashi Fujikawa, Tokyo, JP;
Masayuki Ishibashi, Tokyo, JP;
Kazuhiro Iriguchi, Nagasaki, JP;
Kouhei Kawano, Nagasaki, JP;
Takashi Fujikawa, Tokyo, JP;
Masayuki Ishibashi, Tokyo, JP;
Kazuhiro Iriguchi, Nagasaki, JP;
Kouhei Kawano, Nagasaki, JP;
Sumco Corporation, Tokyo, JP;
Sumco Techxiv Corp., Nagasaki, JP;
Abstract
There is provided a susceptor for a vapor phase epitaxial growth device, by which skidding at the time of loading a silicon wafer is prevented and the wafer can be loaded at a fixed position of the susceptor: wherein a ring-shaped groove having sloping planes widening toward a surface of the susceptor are formed on the outermost circumference of the bottom surface; and gas release openings penetrating through to the back surface of the susceptor are formed, each having a sectional area of 2.0 to 3.0 mmand a ratio of all opening areas is 0.25 to 0.5% on the bottom surface.