The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2015

Filed:

Jul. 22, 2013
Applicant:

Elite Semiconductor Memory Technology Inc., Hsinchu, TW;

Inventor:

Cheng-Hung Tsai, New Tapiei, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/24 (2006.01); G11C 16/30 (2006.01); G11C 16/00 (2006.01); G11C 16/12 (2006.01);
U.S. Cl.
CPC ...
G11C 16/24 (2013.01); G11C 16/30 (2013.01); G11C 16/00 (2013.01); G11C 16/12 (2013.01);
Abstract

A nonvolatile semiconductor memory device comprises a memory cell array, a staircase voltage generator, and a decode and level shift circuit. The memory cell array comprises a plurality of memory cells and a plurality of bit lines coupled to the plurality of memory cells. The staircase voltage generator generates a staircase voltage having a staircase waveform that varies in at least two steps. The decode and level shift circuit selects one of said plurality of bit lines and applies the staircase voltage as a program voltage to the selected bit line.


Find Patent Forward Citations

Tsai, Cheng-Hung. (2015). Nonvolatile semiconductor memory device (U.S. Patent No. 9013925). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9013925

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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