The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2015

Filed:

May. 23, 2012
Applicants:

Fen Chen, Williston, VT (US);

Kai Di Feng, Hopewell Junction, NY (US);

Pui Ling Yee, Essex Junction, VT (US);

Inventors:

Fen Chen, Williston, VT (US);

Kai Di Feng, Hopewell Junction, NY (US);

Pui Ling Yee, Essex Junction, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 22/34 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A metal-to-metal leakage and breakdown testing structure for semiconductor structures and method of using the testing structure is disclosed. The testing structure includes plurality of resistor bridges connected to respective two terminal devices. The testing structure further includes a plurality of switches each having a voltage node provided between resistors of a respective one of the plurality of resistor bridges. The voltage node is read at a circuit pad when a respective one of the plurality of switches is in an on state. The testing structure further includes a device turning on and off each of the plurality of switches, individually.


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