The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Sep. 06, 2013
Applicant:
Hitachi Metals, Ltd., Tokyo, JP;
Inventors:
Tadayoshi Tsuchiya, Tokyo, JP;
Naoki Kaneda, Tokyo, JP;
Assignee:
Hitachi Metals, Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0237 (2013.01); H01L 21/02389 (2013.01); H01L 21/0254 (2013.01); H01L 21/02576 (2013.01); H01L 21/0262 (2013.01); H01L 29/66212 (2013.01); H01L 29/872 (2013.01);
Abstract
There is provided a group III nitride semiconductor crystal, containing a donor-type impurity and having a hydrogen concentration of 2.0E+16 cmor less in a crystal.
Quick Actions:
Tsuchiya, Tadayoshi. (2015). Group iii nitride semiconductor crystal, group iii nitride semiconductor substrate, group iii nitride semiconductor freestanding substrate, nitride semiconductor device, and rectifier diode (U.S. Patent No. 9013026). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9013026
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile