The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Oct. 11, 2013
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Xi Li, Hopewell Junction, NY (US);
Viorel C. Ontalus, Hopewell Junction, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 21/302 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 29/165 (2013.01); H01L 21/302 (2013.01); H01L 29/78 (2013.01); H01L 29/1608 (2013.01); H01L 29/161 (2013.01); H01L 29/7827 (2013.01);
Abstract
A semiconductor structure has embedded stressor material for enhanced transistor performance. The method of forming the semiconductor structure includes etching an undercut in a substrate material under one or more gate structures while protecting an implant with a liner material. The method further includes removing the liner material on a side of the implant and depositing stressor material in the undercut under the one or more gate structures.