The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Dec. 27, 2013
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Zheng Zhong, Shanghai, CN;
Le Li, Shanghai, CN;
Abstract
A silicon-on-insulator (SOI) radio-frequency (RF) device is disclosed, the SOI RF device includes: a silicon substrate; a buried oxide layer formed on the silicon substrate; a device layer formed on the buried oxide layer, the device layer including an RF device; a first dielectric layer covering the device layer; a deep trench structure extending through, from the top downward, the first dielectric layer, the silicon device layer and the buried oxide layer to an interface between the buried oxide layer and the silicon substrate; and a second dielectric layer covering both of the first dielectric layer and the deep trench structure. The SOI RF device is capable of improving signal transmission characteristics and preventing signal distortion, and can be easily manufactured with lower cost in less critical process conditions. A method of forming such an SOI RF device is also disclosed.