The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Jan. 14, 2014
Sunil Shim, Seoul, KR;
Jaehun Jeong, Hwaseong-si, KR;
Hansoo Kim, Suwon-si, KR;
Su-youn Yi, Yongin-si, KR;
Jaehoon Jang, Seongnam-si, KR;
Sunghoi Hur, Seoul, KR;
Sunil Shim, Seoul, KR;
Jaehun Jeong, Hwaseong-si, KR;
Hansoo Kim, Suwon-si, KR;
Su-Youn Yi, Yongin-si, KR;
Jaehoon Jang, Seongnam-si, KR;
Sunghoi Hur, Seoul, KR;
Abstract
Provided is a semiconductor memory device. In the semiconductor memory device, a lower selection gate controls a first channel region that is defined at a semiconductor substrate and a second channel region that is defined at the lower portion of an active pattern disposed on the semiconductor substrate. The first threshold voltage of the first channel region is different from the second threshold voltage of the second channel region.