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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9012977 B1

PDFFull Text
Date of Patent:
Apr. 21, 2015

Filed:

Jan. 14, 2014

Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristics

Applicants:

Sunil Shim, Seoul, KR;

Jaehun Jeong, Hwaseong-si, KR;

Hansoo Kim, Suwon-si, KR;

Su-youn Yi, Yongin-si, KR;

Jaehoon Jang, Seongnam-si, KR;

Sunghoi Hur, Seoul, KR;

Inventors:

Sunil Shim, Seoul, KR;

Jaehun Jeong, Hwaseong-si, KR;

Hansoo Kim, Suwon-si, KR;

Su-Youn Yi, Yongin-si, KR;

Jaehoon Jang, Seongnam-si, KR;

Sunghoi Hur, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel Sibley & Sajovec, PA

Primary Examiner:

Ngan Ngo

Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/66 (2006.01); H01L 27/02 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 27/11565 (2013.01); H01L 27/11578 (2013.01); H01L 27/11582 (2013.01); H01L 29/7926 (2013.01);
Abstract

Provided is a semiconductor memory device. In the semiconductor memory device, a lower selection gate controls a first channel region that is defined at a semiconductor substrate and a second channel region that is defined at the lower portion of an active pattern disposed on the semiconductor substrate. The first threshold voltage of the first channel region is different from the second threshold voltage of the second channel region.

Find Patent Forward Citations

Shim, Sunil. (2015). Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristics (U.S. Patent No. 9012977). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9012977

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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