The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Apr. 17, 2014
Applicant:
Intermolecular, Inc., San Jose, CA (US);
Inventors:
Ronald J. Kuse, San Diego, CA (US);
Tony P. Chiang, Campbell, CA (US);
Imran Hashim, Saratoga, CA (US);
Assignee:
Intermolecular, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/01 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/1233 (2013.01); H01L 45/1616 (2013.01); H01L 45/1641 (2013.01); H01L 27/2409 (2013.01); H01L 27/2481 (2013.01); H01L 45/10 (2013.01); H01L 45/085 (2013.01); H01L 45/145 (2013.01);
Abstract
Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.