The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Dec. 23, 2013
Intermolecular, Inc., San Jose, CA (US);
Monica Sawkar Mathur, San Jose, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
In some embodiments, control elements that can be suitable for nonvolatile memory device applications are disclosed. The control element can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The control element can be based on multilayer dielectric stacks. The control element can include a zirconium oxide-molybdenum oxide-zirconium oxide multilayer stack. The control element can be based on multilayer dielectric stacks. The control element can include a molybdenum oxide-zirconium oxide-molybdenum oxide multilayer stack. The zirconium oxide in either of the two configurations can be replaced by at least one of hafnium oxide, aluminum oxide, magnesium oxide, or the lanthanide oxides.