The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2015

Filed:

May. 21, 2010
Applicant:

Jun-fei Zheng, Westport, CT (US);

Inventor:

Jun-Fei Zheng, Westport, CT (US);

Assignee:

Entegris, Inc., Billerica, MA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01B 1/02 (2006.01); C01B 19/00 (2006.01); C01B 21/082 (2006.01); C22C 16/00 (2006.01); C22C 30/00 (2006.01); C23C 16/30 (2006.01); C23C 16/34 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01B 1/02 (2013.01); C01B 19/002 (2013.01); C01B 19/007 (2013.01); C01B 21/0828 (2013.01); C22C 16/00 (2013.01); C22C 30/00 (2013.01); C23C 16/305 (2013.01); C23C 16/34 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01); H01L 45/1616 (2013.01); H01L 45/00 (2013.01); C01P 2002/50 (2013.01); G11C 13/0004 (2013.01);
Abstract

Germanium antimony telluride materials are described, e.g., material of the formula GeSbTeCN, wherein x is about 0.1-0.6, y is about 0-0.7, z is about 0.2-0.9, m is about 0.02-0.20, and n is about 0.2-0.20. One specific composition includes from 0 to 50% Sb, from 50 to 80% Te, from 20 to 50% Ge, from 3 to 20% N and from 2 to 15% carbon, wherein all atomic percentages of all components of the film total to 100 atomic %. Another specific composition includes from 10 to 50% Sb, from 50 to 80% Te, from 10 to 50% Ge, from 3 to 20% N and from 3 to 20% carbon, and wherein all atomic percentages of all components of the film total to 100 atomic %. Material of such composition is useful to form phase change films, e.g., as conformally coated on a phase change memory device substrate to fabricate a phase change random access memory cell.


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