The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2015

Filed:

Apr. 24, 2007
Applicants:

Gaetano Santoruvo, San Diego, CA (US);

Stefano Lo Priore, San Diego, CA (US);

Inventors:

Gaetano Santoruvo, San Diego, CA (US);

Stefano Lo Priore, San Diego, CA (US);

Assignee:

STMicroelectronics, Inc., Coppell, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05B 1/00 (2006.01); H05B 3/28 (2006.01); B01J 19/00 (2006.01); B41J 2/14 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); B01L 3/00 (2006.01); B01L 7/00 (2006.01); H01L 23/34 (2006.01);
U.S. Cl.
CPC ...
H05B 3/28 (2013.01); B01J 19/0093 (2013.01); B01J 2219/00783 (2013.01); B01J 2219/00873 (2013.01); B01L 3/5027 (2013.01); B01L 7/52 (2013.01); B41J 2/14129 (2013.01); B41J 2202/13 (2013.01); H01L 23/345 (2013.01); H01L 27/1203 (2013.01); H01L 29/0657 (2013.01); H01L 29/78 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An integrated heater formed as a field effect transistor in a semiconductor substrate, with the transistor having source and drain regions with a channel region extending therebetween to conduct current. The channel region has a resistance when conducting current to generate heat above a selected threshold. A dielectric layer is disposed on the channel region and a gate electrode is disposed on the dielectric layer to control the current of the channel region. A thermally insulating barrier is formed in the semiconductor material and may extend about the transistor. The object to be heated is positioned to receive the heat generated by the resistance of the channel region; the object may be a fluid chamber.


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