The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Feb. 12, 2013
Applicant:
Fujitsu Semiconductor Limited, Yokohama, JP;
Inventors:
Akihiro Usujima, Yokohama, JP;
Shigeo Satoh, Yokohama, JP;
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823418 (2013.01); H01L 21/823468 (2013.01);
Abstract
A semiconductor device includes a first transistor including a first source/drain region and a first sidewall spacer, and a second transistor including a second source/drain region and a second sidewall spacer, the first sidewall spacer has a first width and the second sidewall spacer has a second width wider than the first width, and the first source/drain region has a first area and the second source/drain region has a second area larger than the first area.