The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2015

Filed:

Dec. 19, 2008
Applicants:

Hidehiko Tanaka, Tsukuba, JP;

Yoshitaka Aoki, Takasaki, JP;

Inventors:

Hidehiko Tanaka, Tsukuba, JP;

Yoshitaka Aoki, Takasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 31/36 (2006.01); C04B 35/565 (2006.01); C04B 35/571 (2006.01); C04B 35/626 (2006.01); C04B 35/632 (2006.01);
U.S. Cl.
CPC ...
C01B 31/36 (2013.01); C04B 35/565 (2013.01); C04B 35/571 (2013.01); C04B 35/6269 (2013.01); C04B 35/6325 (2013.01); C04B 2235/3289 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/483 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/602 (2013.01); C04B 2235/723 (2013.01); C04B 2235/79 (2013.01); C04B 2235/9661 (2013.01);
Abstract

A method of producing silicon carbide is provided. The method includes heating a cured product of a curable silicone composition in a non-oxidizing atmosphere at a temperature exceeding 1,500° C. but not more than 2,600° C. The method is capable of producing high-purity silicon carbide simply and at a high degree of productivity, and is capable of simply producing a silicon carbide molded item having a desired shape and dimensions.


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