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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9011599 B1

PDFFull Text
Date of Patent:
Apr. 21, 2015

Filed:

Jul. 14, 2010

Method of temperature determination for deposition reactors

Applicants:

Jhi-cherng LU, Hsin-Chu, TW;

Jr-hung LI, Chupei, TW;

Chii-horng LI, Jhu-Bei, TW;

Pang-yen Tsai, Jhu-Bei, TW;

Bing-hung Chen, San-Xia Town, TW;

Tze-liang Lee, Hsinchu, TW;

Inventors:

Jhi-Cherng Lu, Hsin-Chu, TW;

Jr-Hung Li, Chupei, TW;

Chii-Horng Li, Jhu-Bei, TW;

Pang-Yen Tsai, Jhu-Bei, TW;

Bing-Hung Chen, San-Xia Town, TW;

Tze-Liang Lee, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Attorney:

Duane Morris LLP

Primary Examiner:

Bob M Kunemund

Int. Cl.
CPC ...
C30B 25/08 (2006.01); C30B 25/16 (2006.01); C30B 29/06 (2006.01); C30B 29/08 (2006.01); C30B 29/52 (2006.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
C30B 25/16 (2013.01); C30B 29/06 (2013.01); C30B 29/08 (2013.01); C30B 29/52 (2013.01); H01L 21/0245 (2013.01); H01L 21/02532 (2013.01); H01L 21/0262 (2013.01); H01L 22/10 (2013.01); H01L 22/12 (2013.01);
Abstract

A method of determining a temperature in a deposition reactor includes the steps of depositing a first epitaxial layer of silicon germanium on a substrate, depositing a second epitaxial layer of silicon above the first epitaxial layer, measuring the thickness of the second epitaxial layer and determining the temperature in the deposition reactor using the measured thickness of the second epitaxial layer. The method may also include heating the deposition reactor to approximately a predetermined temperature using a heating device and a temperature measuring device and generating a signal indicative of a temperature within the deposition reactor. The method may also contain the steps of comparing the measured thickness with a predetermined thickness of the second epitaxial layer corresponding to the predetermined temperature and determining the temperature in the deposition reactor using the measured thickness of the second epitaxial layer and the predetermined thickness of the second epitaxial layer.

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