The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2015

Filed:

Sep. 16, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Chih-Chao Yang, Glenmont, NY (US);

Stephan A. Cohen, Wappingers Falls, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 24/29 (2013.01); H01L 21/76814 (2013.01); H01L 21/768 (2013.01); H01L 21/76883 (2013.01); H01L 23/522 (2013.01); H01L 23/5226 (2013.01); H01L 23/532 (2013.01); H01L 23/53233 (2013.01);
Abstract

A metal cap is formed on an exposed upper surface of a conductive structure that is embedded within an interconnect dielectric material. During the formation of the metal cap, metallic residues simultaneously form on an exposed upper surface of the interconnect dielectric material. A thermal nitridization process or plasma nitridation process is then performed which partially or completely converts the metallic residues into nitrided metallic residues. During the nitridization process, a surface region of the interconnect dielectric material and a surface region of the metal cap also become nitrided.


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