The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Nov. 20, 2012
Csmc Technologies Fab1 Co., Ltd., Jiangsu, CN;
Xinwei Zhang, Jiangsu, CN;
Changfeng Xia, Jiangsu, CN;
Chengjian Fan, Jiangsu, CN;
Wei Su, Jiangsu, CN;
CSMC Technologies Fabi Co., Ltd., Jiangsu, CN;
Abstract
A monitoring structure and a relevant monitoring method for the silicon wet etching depth are provided. The structure includes a wet etched groove formed on a monocrystalline silicon material with at least two top surfaces thereof being rectangular; and the top surface widths of the grooves are Wand Wrespectively, W=d/0.71, and W=d/0.71, where dis the maximum wet etching depth to be monitored, and dis the minimum of the wet etching depth to be monitored. The method includes: performing anisotropic wet etching on a monocrystalline silicon wafer according to a pattern with a monitoring pattern, forming an etched groove to be monitored and a structure for monitoring the depth of the groove, and then monitoring the structure to monitor the wet etching depth. The etching depth of the groove can be monitored with low costs, and a higher monitoring accuracy is obtained.