The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Nov. 09, 2011
John G. Massey, Jericho, VT (US);
Scott J. Mcallister, Pleasant Valley, NY (US);
Charles J. Montrose, Clintondale, NY (US);
Stewart E. Rauch, Iii, Poughkeepsie, NY (US);
John G. Massey, Jericho, VT (US);
Scott J. McAllister, Pleasant Valley, NY (US);
Charles J. Montrose, Clintondale, NY (US);
Stewart E. Rauch, III, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A radiation hardened static memory cell, methods of manufacture and design structures are provided. The method includes forming one or more first gate stacks and second gate stacks on a substrate. The method further includes providing a shallow implant process for the one or more first gate stacks such that diffusion regions of the one or more first gate stacks are non-butted junction regions. The method further includes providing a deep implant process for the one or more second gates stack such that diffusions regions of the one or more second gate stacks are butted junction regions.